SVT043R0NT Specs and Replacement
Type Designator: SVT043R0NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 179 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 545 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220
SVT043R0NT substitution
SVT043R0NT datasheet
svt043r0nt svt043r0nl5tr.pdf
SVT043R0NT/L5 180A 40V N 2 S D 1 8 SVT043R0NT/L5 N MOS S 7 D 2 LVMOS 1 D S 3 6 G 4 5 D ... See More ⇒
svt044r5nt svt044r5nd svt044r5nl5.pdf
SVT044R5NT/D/L5_Datasheet 178A, 40V N-CHANNEL MOSFET DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Mana... See More ⇒
Detailed specifications: SVT035R5NSA , SVT035R5NT , SVT037R0NL3 , SVT041R7NT , SVT04230NR , SVT042R5NL5TR , SVT042R5NT , SVT043R0NL5TR , IRF1407 , SVT044R5NDTR , SVT044R5NL5TR , SVT068R5NDTR , SVT068R5NL5TR , SVT068R5NSTR , SVT068R5NT , SVT078R0NS , SVT078R0NT .
Keywords - SVT043R0NT MOSFET specs
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SVT043R0NT substitution
SVT043R0NT replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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