All MOSFET. FDP5N60NZ Datasheet

 

FDP5N60NZ Datasheet and Replacement


   Type Designator: FDP5N60NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220
 

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FDP5N60NZ Datasheet (PDF)

 ..1. Size:265K  fairchild semi
 fdp5n60nz fdpf5n60nz.pdf pdf_icon

FDP5N60NZ

November 2010TMUniFET-IIFDP5N60NZ / FDPF5N60NZN-Channel MOSFET600V, 4.5A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 10nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced techno

 ..2. Size:750K  onsemi
 fdp5n60nz fdpf5n60nz.pdf pdf_icon

FDP5N60NZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:265K  fairchild semi
 fdp5n50 fdpf5n50.pdf pdf_icon

FDP5N60NZ

December 2007UniFETTMFDP5N50 / FDPF5N50tmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has bee

 9.2. Size:371K  fairchild semi
 fdp5n50.pdf pdf_icon

FDP5N60NZ

May 2012UniFETTMFDP5N50 / FDPF5N50TtmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been es

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Datasheet: FDP42AN15A0 , FDP51N25 , FDP52N20 , STM201N , FDP5500F085 , FDP55N06 , FDP5800 , FDP5N50NZ , AON7506 , STM122N , FDP61N20 , STM121N , FDP65N06 , FDP75N08A , FDP7N50 , FDP7N60NZ , STM105N .

History: APT12080LVR

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