All MOSFET. FDP5N60NZ Datasheet

 

FDP5N60NZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDP5N60NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220

 FDP5N60NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP5N60NZ Datasheet (PDF)

 ..1. Size:265K  fairchild semi
 fdp5n60nz fdpf5n60nz.pdf

FDP5N60NZ FDP5N60NZ

November 2010TMUniFET-IIFDP5N60NZ / FDPF5N60NZN-Channel MOSFET600V, 4.5A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 10nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced techno

 ..2. Size:750K  onsemi
 fdp5n60nz fdpf5n60nz.pdf

FDP5N60NZ FDP5N60NZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:265K  fairchild semi
 fdp5n50 fdpf5n50.pdf

FDP5N60NZ FDP5N60NZ

December 2007UniFETTMFDP5N50 / FDPF5N50tmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has bee

 9.2. Size:371K  fairchild semi
 fdp5n50.pdf

FDP5N60NZ FDP5N60NZ

May 2012UniFETTMFDP5N50 / FDPF5N50TtmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been es

 9.3. Size:247K  fairchild semi
 fdp5n50nz fdpf5n50nz.pdf

FDP5N60NZ FDP5N60NZ

March 2010UniFET-IITMFDP5N50NZ / FDPF5N50NZtmN-Channel MOSFET500V, 4.5A, 1.5Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC)DMOS technology. Low Crss (Typ. 4pF)This advance technology has b

 9.4. Size:256K  fairchild semi
 fdp5n50nzf fdpf5n50nzf.pdf

FDP5N60NZ FDP5N60NZ

February 2010TMUniFET-IIFDP5N50NZF / FDPF5N50NZFtmN-Channel MOSFET500V, 4.2A, 1.75Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC)DMOS technology. Low Crss ( Typ. 4pF)This advanc

 9.5. Size:427K  fairchild semi
 fdp5n50f fdpf5n50ft.pdf

FDP5N60NZ FDP5N60NZ

December 2007UniFETTMFDP5N50F / FDPF5N50FTtmN-Channel MOSFET, FRFET 500V, 4.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced tech

 9.6. Size:224K  fairchild semi
 fdp5n50u fdpf5n50ut.pdf

FDP5N60NZ FDP5N60NZ

November2009TMUltra FRFETFDP5N50U / FDPF5N50UTtmN-Channel MOSFET, FRFET500V, 4A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance tech

 9.7. Size:702K  fairchild semi
 fdp5n50nzu fdpf5n50nzu.pdf

FDP5N60NZ FDP5N60NZ

February 2010TMUniFET-IIFDP5N50NZU / FDPF5N50NZUtmN-Channel MOSFET500V, 3.9A, 2.0Features Description RDS(on) = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC)DMOS technology. Low Crss ( Typ. 4pF)This advance

 9.8. Size:1763K  onsemi
 fdp5n50nz fdpf5n50nz.pdf

FDP5N60NZ FDP5N60NZ

Datasheet: FDP42AN15A0 , FDP51N25 , FDP52N20 , STM201N , FDP5500F085 , FDP55N06 , FDP5800 , FDP5N50NZ , IRFB3607 , STM122N , FDP61N20 , STM121N , FDP65N06 , FDP75N08A , FDP7N50 , FDP7N60NZ , STM105N .

 

 
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