FQP12N65C Datasheet and Replacement
Type Designator: FQP12N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: TO220AB
FQP12N65C substitution
FQP12N65C Datasheet (PDF)
fqp12n65c fqpf12n65c.pdf

12N65 SeriesN-Channel MOSFET12A, 650V, N H FQP12N65C H12N65P P: TO-220AB12N65 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF12N65C H12N65F F: TO-220FP12N65 Series Pin AssignmentFeaturesID=12AOriginative New Des
fqp12n60.pdf

April 2000TMQFETQFETQFETQFETFQP12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been
fqp12n60c.pdf

March 2014FQP12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored to
fqp12n60c fqpf12n60c.pdf

September 2007 QFETFQP12N60C / FQPF12N60C 600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especiall
Datasheet: SVT25600NF , SVT25600NT , SVT3025D4 , SVT4607SA , SVTP035R5NL3 , SVTP209R7NP7 , EMB07N03HR , EMF90P02A , 8N60 , FQPF12N65C , HY3408AP , HY3408AM , HY3408AB , HY3408APS , HY3408APM , HY5012W , HY5012A .
History: IRFF9132 | IXFB38N100Q2 | HCD65R2K7 | IPP80N06S4-05 | IPP45N06S4-09 | TPH1500CNH | SML1002R4AN
Keywords - FQP12N65C MOSFET datasheet
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History: IRFF9132 | IXFB38N100Q2 | HCD65R2K7 | IPP80N06S4-05 | IPP45N06S4-09 | TPH1500CNH | SML1002R4AN



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