All MOSFET. HY3408AB Datasheet

 

HY3408AB Datasheet and Replacement


   Type Designator: HY3408AB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 584 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263
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HY3408AB Datasheet (PDF)

 8.1. Size:820K  1
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HY3408AB

HY3408P/M/B/PS/PMAbsolute Maximum RatingsSymbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current * TC

 9.1. Size:784K  1
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HY3408AB

HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m(typ.)@VGS = 10V RDS(ON)= 2.9m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P

 9.2. Size:1093K  hymexa
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HY3408AB

HY3403P/B N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/140ARDS(ON)=2.2m(typ.)@VGS = 10VRDS(ON)=2.7m(typ.) @VGS =4.5V 100% avalanche tested SGD Excellent CdV/dt effect decline Lead- Free Device AvailableGDSTO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DCN-Channel MOSFETOrdering and Marking Infor

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRL2910 | IXTP16N50PM | RSS050P03FU6TB | SFI9Z24 | DMN3730U | IXTN120N25 | STH6NA80FI

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