WM02DN08T
MOSFET. Datasheet pdf. Equivalent
Type Designator: WM02DN08T
Marking Code: 02K
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 0.75
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 4.5
nS
Cossⓘ -
Output Capacitance: 13
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
SOT563
WM02DN08T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM02DN08T
Datasheet (PDF)
..1. Size:459K way-on
wm02dn08t.pdf
Document: W0803109, Rev: C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS DR
6.1. Size:336K way-on
wm02dn085c.pdf
Document: W0803219, Rev: D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V
6.2. Size:595K way-on
wm02dn08d.pdf
WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
6.3. Size:384K way-on
wm02dn080c.pdf
WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit
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