WM02DN08T Specs and Replacement
Type Designator: WM02DN08T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT563
WM02DN08T substitution
- MOSFET ⓘ Cross-Reference Search
WM02DN08T datasheet
wm02dn08t.pdf
Document W0803109, Rev C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS D R ... See More ⇒
wm02dn085c.pdf
Document W0803219, Rev D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V... See More ⇒
wm02dn08d.pdf
WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS D R ... See More ⇒
wm02dn080c.pdf
WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit... See More ⇒
Detailed specifications: WM01P60M, WM02DH08D, WM02DH08M3, WM02DH08T, WM02DH50M3, WM02DN080C, WM02DN085C, WM02DN08D, IRF640, WM02DN095C, WM02DN110C, WM02DN48A, WM02DN50M3, WM02DN560Q, WM02DN60M3, WM02DN70A, WM02DN70M3
Keywords - WM02DN08T MOSFET specs
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