WM02DN48A
MOSFET. Datasheet pdf. Equivalent
Type Designator: WM02DN48A
Marking Code: 9926
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 4.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 73
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package: SOP-8L
WM02DN48A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM02DN48A
Datasheet (PDF)
..1. Size:370K way-on
wm02dn48a.pdf 
Document: W0803087, Rev: C WM02DN48A A Dual N-Channel MOSFET Features V = 20V, I = 4.8A DS DR
8.1. Size:459K way-on
wm02dn08t.pdf
Document: W0803109, Rev: C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS DR
8.2. Size:786K way-on
wm02dn560q.pdf
WM02DN560Q Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN560Q uses advanced power trench 4.2 @VGS=4.5V technology that has been especially tailored to 4.3 @VGS=3.9V minimize the on-state resistance This device is 20 56 4.7 @VGS=3.1V suitable for un-directional or bidirectional load switch, 5.0 @VGS=2.5V facilitated
8.3. Size:336K way-on
wm02dn085c.pdf
Document: W0803219, Rev: D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V
8.4. Size:595K way-on
wm02dn08d.pdf
WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
8.5. Size:581K way-on
wm02dn70m3.pdf
WM02DN70M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN70M3 uses advanced power trenchtechnology that has been especially tailored to 11.5 @VGS=10V minimize the on-state resistance This device is 20 7 13 @VGS=4.5V suitable for un-directional or bidirectional load switch, 15 @VGS=2.5V facilitated by its common-drain config
8.6. Size:384K way-on
wm02dn080c.pdf
WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit
8.7. Size:688K way-on
wm02dn50m3.pdf
WM02DN50M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN50M3 uses advanced power trenchtechnology that has been especially tailored to 21 @VGS=4.5V minimize the on-state resistance This device is 20 5 suitable for un-directional or bidirectional load switch, 26 @VGS=2.5V facilitated by its common-drain configuration Feat
8.8. Size:334K way-on
wm02dn110c.pdf
Document: W0803165, Rev: F WM02DN110C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN110C uses advanced power trench 6.0 @VGS=4.5V technology that has been especially tailored to 6.2 @VGS=4.0V minimize the on-state resistance This device is 20 11 6.5 @VGS=3.7V suitable for un-directional or bidirectional load 7.0 @VG
8.9. Size:454K way-on
wm02dn60m3.pdf
Document: W0803061, Rev: F WM02DN60M3 Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN60M3 uses advanced power trench technology that has been especially tailored to 15.0 @VGS=4.5V minimize the on-state resistance This device is 20 6 16.5 @VGS=3.8V suitable for un-directional or bidirectional load switch, 19.0 @VGS=2.5V
8.10. Size:453K way-on
wm02dn70a.pdf
WM02DN70A Dual N-Channel Enhancement MOSFET Description WM02DN70A uses advanced trench technology that V (V) I (A) R TYP (m) (BR)DSS D DS(on)has been especially tailored to minimize the on-state 11 @VGS=10V resistance. This device is suitable for un-directional 20 7 12 @VGS=4.5V or bidirectional load switch, facilitated by its common-drain configuration. 15 @VGS=2.5V
8.11. Size:336K way-on
wm02dn095c.pdf
Document: W0803218, Rev: D WM02DN095C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN095C uses advanced power trench 7.4 @VGS=4.5V technology that has been especially tailored to 7.8 @VGS=4.0V minimize the on-state resistance This device is 20 9.5 8.0 @VGS=3.7V suitable for un-directional or bidirectional load 8.8 @V
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