WM02N20F Datasheet and Replacement
Type Designator: WM02N20F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: DFN1006-3
WM02N20F substitution
WM02N20F Datasheet (PDF)
wm02n20f.pdf

WM02N20F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DGR
wm02n20g.pdf

WM02N20G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DR
wm02n28m.pdf

Document: W0803348, Rev: B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS DR
Datasheet: WM02DN70A , WM02DN70M3 , WM02DP06D , WM02N08F , WM02N08FB , WM02N08G , WM02N08H , WM02N08L , STP75NF75 , WM02N20G , WM02N25M , WM02N28M , WM02N31M , WM02N45M , WM02N50M , WM02N70ME , WM02N75M2 .
Keywords - WM02N20F MOSFET datasheet
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