WM02P06F Specs and Replacement
Type Designator: WM02P06F
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 12 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: DFN1006-3
WM02P06F substitution
- MOSFET ⓘ Cross-Reference Search
WM02P06F datasheet
wm02p06f.pdf
WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS D S R ... See More ⇒
wm02p06l.pdf
Document W0803106, Rev B WM02P06L 1 P-Channel MOSFET Features V = -20 V, I = -0.66 A DS D R ... See More ⇒
wm02p06h.pdf
WM02P06H P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS D R ... See More ⇒
wm02p06g.pdf
WM02P06G P-Channel MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -0.66 A DS D R ... See More ⇒
Detailed specifications: WM02N20G, WM02N25M, WM02N28M, WM02N31M, WM02N45M, WM02N50M, WM02N70ME, WM02N75M2, IRF4905, WM02P06G, WM02P06H, WM02P06L, WM02P160R, WM02P18F, WM02P20G, WM02P23M, WM02P26M
Keywords - WM02P06F MOSFET specs
WM02P06F cross reference
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