WM03DP50A Specs and Replacement
Type Designator: WM03DP50A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP8
WM03DP50A substitution
- MOSFET ⓘ Cross-Reference Search
WM03DP50A datasheet
wm03dp50a.pdf
WM03DP50A Dual P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30V, I = -5A DS D R ... See More ⇒
wm03dh34m3.pdf
Document W0803130, Rev B WM03DH34M3 D N+P Dual Channel MOSFET Features N - Channel V = 30V, I = 3.4A DS D R ... See More ⇒
wm03dn85a.pdf
Document W0803227, Rev A WM03DN85A 2 Dual N-Channel MOSFET Features V = 30V, I = 8.5A DS D R ... See More ⇒
wm03dn06d.pdf
WM03DN06D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS D R ... See More ⇒
Detailed specifications: WM02P41M, WM02P56M2, WM02P56M3, WM02P60M2, WM03DH34M3, WM03DH60A, WM03DN06D, WM03DN85A, STP80NF70, WM03N01G, WM03N01H, WM03N01L, WM03N06M, WM03N09F, WM03N115A, WM03N32M, WM03N57M
Keywords - WM03DP50A MOSFET specs
WM03DP50A cross reference
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