WM04N50M Specs and Replacement
Type Designator: WM04N50M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49.5 nS
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: SOT23
WM04N50M substitution
- MOSFET ⓘ Cross-Reference Search
WM04N50M datasheet
wm04n50m.pdf
WM04N50M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 40V, I = 5A DS D R ... See More ⇒
Detailed specifications: WM03P41M, WM03P41M2, WM03P42M, WM03P42M2, WM03P51A, WM03P56M2, WM03P60M2, WM03P91A, P60NF06, WM04P50M, WM04P56M2, WM05DP01D, WM05N02G, WM05N02M, WM05N03M, WM05P01G, WM05P01M
Keywords - WM04N50M MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: KU035N06P
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