All MOSFET. WMB014N04LG4 Datasheet

 

WMB014N04LG4 Datasheet and Replacement


   Type Designator: WMB014N04LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 165 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11.9 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PDFN5060-8L
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WMB014N04LG4 Datasheet (PDF)

 ..1. Size:977K  way-on
 wmb014n04lg4.pdf pdf_icon

WMB014N04LG4

WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB014N04LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 6.1. Size:639K  way-on
 wmb014n06hg4.pdf pdf_icon

WMB014N04LG4

WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 6.2. Size:641K  way-on
 wmb014n06lg4.pdf pdf_icon

WMB014N04LG4

WMB014N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.1. Size:647K  way-on
 wmb017n03lg2.pdf pdf_icon

WMB014N04LG4

WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

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History: SM7580NSF | F5038H | ME4947-G | IXFB72N55Q2 | WST2319 | HUFA75545P3 | IXFN55N50

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