WMB034N06LG4 MOSFET Datasheet: N-Ch, 60V, 125A. Full specification with pinout and replacement list

WMB034N06LG4 Specs and Replacement

Type Designator: WMB034N06LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: PDFN5060-8L

WMB034N06LG4 substitution

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WMB034N06LG4 datasheet

..1. Size:988K way-on
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WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB034N06LG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5... See More ⇒

5.1. Size:649K way-on
wmb034n06hg4.pdf pdf_icon

WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB034N06HG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5... See More ⇒

9.1. Size:637K way-on
wmb037n10hgs.pdf pdf_icon

WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB037N10HGS uses Wayon's advanced power trench MOSFET G ss technology that has been especially tailored to minimize the on-state s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8... See More ⇒

9.2. Size:597K way-on
wmb03dn06t1.pdf pdf_icon

WMB03DN06T1 60V Dual N-Channel Enhancement Mode Power MOSFET Description D1 D2 D1 D2 D1 D2 D1 D2 WMB03DN06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1 G1 G2 yet maintain superior switching performance. S2 S2 G1 G2 S1 Features PDFN5060-8L V = 60V, I = 6A DS D R ... See More ⇒