All MOSFET. WMB043N10LGS Datasheet

 

WMB043N10LGS Datasheet and Replacement


   Type Designator: WMB043N10LGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 131.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37.8 nS
   Cossⓘ - Output Capacitance: 768 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: PDFN5060-8L
 

 WMB043N10LGS substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMB043N10LGS Datasheet (PDF)

 ..1. Size:1106K  way-on
 wmb043n10lgs.pdf pdf_icon

WMB043N10LGS

WMB043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8L

 5.1. Size:627K  way-on
 wmb043n10hgs.pdf pdf_icon

WMB043N10LGS

WMB043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10HGS uses Wayon's advanced power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8

 9.1. Size:976K  way-on
 wmb049n12hg2.pdf pdf_icon

WMB043N10LGS

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB049N12HG2 uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN

 9.2. Size:1057K  way-on
 wmb042dn03lg2.pdf pdf_icon

WMB043N10LGS

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB042DN03LG2 uses Wayon's2nd generation power trench G2S2S2S2S2S2MOSFET technology that has been especially tailored to S2G2minimize the on-state resistance and yet maintain superior G1D1switching performance. This device is well suited for high D1D1D1D1efficiency fast switching a

SHOW MORE

Datasheet: WMB034N06HG4 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 , WMB043N10HGS , 5N60 , WMB048NV6HG4 , WMB048NV6LG4 , WMB049N12HG2 , WMB050N03LG4 , WMB053NV8HGS , WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS .

History: 2SK2052 | SPN2054T252RG

Keywords - WMB043N10LGS MOSFET datasheet

 WMB043N10LGS cross reference
 WMB043N10LGS equivalent finder
 WMB043N10LGS lookup
 WMB043N10LGS substitution
 WMB043N10LGS replacement

 

 
Back to Top

 


 
.