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WMB043N10LGS Specs and Replacement


   Type Designator: WMB043N10LGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 131.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37.8 nS
   Cossⓘ - Output Capacitance: 768 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: PDFN5060-8L
 

 WMB043N10LGS substitution

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WMB043N10LGS Specs

 ..1. Size:1106K  way-on
 wmb043n10lgs.pdf pdf_icon

WMB043N10LGS

WMB043N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8L ... See More ⇒

 5.1. Size:627K  way-on
 wmb043n10hgs.pdf pdf_icon

WMB043N10LGS

WMB043N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB043N10HGS uses Wayon's advanced power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8... See More ⇒

 9.1. Size:976K  way-on
 wmb049n12hg2.pdf pdf_icon

WMB043N10LGS

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB049N12HG2 uses Wayon's 2nd generation power trench D D D D MOSFET technology that has been especially tailored to minimize the G ss on-state resistance and yet maintain superior switching performance. s ss G s This device is well suited for high efficiency fast switching applications. PDFN... See More ⇒

 9.2. Size:1057K  way-on
 wmb042dn03lg2.pdf pdf_icon

WMB043N10LGS

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET Description WMB042DN03LG2 uses Wayon's2nd generation power trench G2 S2 S2 S2 S2 S2 MOSFET technology that has been especially tailored to S2 G2 minimize the on-state resistance and yet maintain superior G1 D1 switching performance. This device is well suited for high D1 D1 D1 D1 efficiency fast switching a... See More ⇒

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Detailed specifications: WMB034N06HG4 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 , WMB043N10HGS , IRLB4132 , WMB048NV6HG4 , WMB048NV6LG4 , WMB049N12HG2 , WMB050N03LG4 , WMB053NV8HGS , WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS .

History: UF640 | FQD10N20TM

Keywords - WMB043N10LGS MOSFET specs

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