All MOSFET. WMB049N12HG2 Datasheet

 

WMB049N12HG2 Datasheet and Replacement


   Type Designator: WMB049N12HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1005 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN5060-8L
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WMB049N12HG2 Datasheet (PDF)

 ..1. Size:976K  way-on
 wmb049n12hg2.pdf pdf_icon

WMB049N12HG2

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB049N12HG2 uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN

 9.1. Size:1057K  way-on
 wmb042dn03lg2.pdf pdf_icon

WMB049N12HG2

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB042DN03LG2 uses Wayon's2nd generation power trench G2S2S2S2S2S2MOSFET technology that has been especially tailored to S2G2minimize the on-state resistance and yet maintain superior G1D1switching performance. This device is well suited for high D1D1D1D1efficiency fast switching a

 9.2. Size:445K  way-on
 wmb048nv6hg4.pdf pdf_icon

WMB049N12HG2

WMB048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB048NV6HG4 uses Wayon's 4th generation power trench GsMOSFET technology that has been especially tailored to minimize ss sss Gthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8Lswitching applicatio

 9.3. Size:1106K  way-on
 wmb043n10lgs.pdf pdf_icon

WMB049N12HG2

WMB043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8L

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