WMB049N12HG2 MOSFET Datasheet: N-Ch, 120V, 100A. Full specification with pinout and replacement list

WMB049N12HG2 Specs and Replacement

Type Designator: WMB049N12HG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1005 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: PDFN5060-8L

WMB049N12HG2 substitution

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WMB049N12HG2 datasheet

..1. Size:976K way-on
wmb049n12hg2.pdf pdf_icon

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB049N12HG2 uses Wayon's 2nd generation power trench D D D D MOSFET technology that has been especially tailored to minimize the G ss on-state resistance and yet maintain superior switching performance. s ss G s This device is well suited for high efficiency fast switching applications. PDFN... See More ⇒

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WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET Description WMB042DN03LG2 uses Wayon's2nd generation power trench G2 S2 S2 S2 S2 S2 MOSFET technology that has been especially tailored to S2 G2 minimize the on-state resistance and yet maintain superior G1 D1 switching performance. This device is well suited for high D1 D1 D1 D1 efficiency fast switching a... See More ⇒

9.2. Size:445K way-on
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WMB048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB048NV6HG4 uses Wayon's 4th generation power trench G s MOSFET technology that has been especially tailored to minimize ss ss s G the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8L switching applicatio... See More ⇒

9.3. Size:1106K way-on
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WMB043N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8L ... See More ⇒