WMB100P03TS Datasheet and Replacement
Type Designator: WMB100P03TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 73.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 840 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: PDFN5060-8L
WMB100P03TS substitution
WMB100P03TS Datasheet (PDF)
wmb100p03ts.pdf

WMB100P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB100P03TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -100A DS DR
wmb100n07ts.pdf

WMB100N07TS 70V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB100N07TS uses advanced power trench technology that has DD Dbeen especially tailored to minimize the on-state resistance and yet Gsssmaintain superior switching performance. ssGsFeatures PDFN5060-8L V = 70V, I = 100A DS DR
wmb108n03t1.pdf

WMB108N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB108N03T1 uses advanced power trench technology that has D DDDDbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. ssss sGsFeatures PDFN5060-8L V = 30 V, I = 108A DS DR
Datasheet: WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS , WMB100N07TS , 2SK3568 , WMB108N03T1 , WMB115N15HG4 , WMB115N15LG4 , WMB119N10LG2 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS , WMB129N10T2 .
History: AP4453GYT-HF | STB55NF06L | FDMC86106LZ | PE526BA | SI4116DY | RD60HUF1 | AP30T10GH-HF
Keywords - WMB100P03TS MOSFET datasheet
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History: AP4453GYT-HF | STB55NF06L | FDMC86106LZ | PE526BA | SI4116DY | RD60HUF1 | AP30T10GH-HF



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