All MOSFET. WMB90P04TS Datasheet

 

WMB90P04TS Datasheet and Replacement


   Type Designator: WMB90P04TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.5 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: PDFN5060-8L
 

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WMB90P04TS Datasheet (PDF)

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WMB90P04TS

WMB90P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB90P04TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -40V, I = -95A DS DR

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WMB90P04TS

WMB90P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB90P03TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -90A DS DR

 9.1. Size:611K  way-on
 wmb90n02ts.pdf pdf_icon

WMB90P04TS

WMB90N02TS 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMB90N02TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN5060-8L V = 20V, I = 90A DS DR

Datasheet: WMB690N15HG2 , WMB70N04T1 , WMB70P02TS , WMB80N06TS , WMB80P04TS , WMB81N03T1 , WMB90N02TS , WMB90P03TS , IRF730 , WMB95P06TS , WMC1N40D1 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , WMJ11N150D1 .

History: BLF6G27-45 | BLF6G27-75 | HMS11N65I | AP92U03GJ-HF | 2SK646 | PNMTO600V4 | TSM35N10CP

Keywords - WMB90P04TS MOSFET datasheet

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