WMB90P04TS Datasheet and Replacement
Type Designator: WMB90P04TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 95 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 510 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: PDFN5060-8L
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WMB90P04TS Datasheet (PDF)
wmb90p04ts.pdf

WMB90P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB90P04TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -40V, I = -95A DS DR
wmb90p03ts.pdf

WMB90P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB90P03TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -90A DS DR
wmb90n02ts.pdf

WMB90N02TS 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMB90N02TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN5060-8L V = 20V, I = 90A DS DR
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK3667 | HGS110N08A | IXTK62N25 | PK5G6EA | ELM549407A | SWP70N10V | HGB068N15S
Keywords - WMB90P04TS MOSFET datasheet
WMB90P04TS cross reference
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WMB90P04TS replacement
History: 2SK3667 | HGS110N08A | IXTK62N25 | PK5G6EA | ELM549407A | SWP70N10V | HGB068N15S



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