WMB90P04TS Datasheet and Replacement
Type Designator: WMB90P04TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 510 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: PDFN5060-8L
WMB90P04TS substitution
WMB90P04TS Datasheet (PDF)
wmb90p04ts.pdf

WMB90P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB90P04TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -40V, I = -95A DS DR
wmb90p03ts.pdf

WMB90P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB90P03TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -90A DS DR
wmb90n02ts.pdf

WMB90N02TS 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMB90N02TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN5060-8L V = 20V, I = 90A DS DR
Datasheet: WMB690N15HG2 , WMB70N04T1 , WMB70P02TS , WMB80N06TS , WMB80P04TS , WMB81N03T1 , WMB90N02TS , WMB90P03TS , BS170 , WMB95P06TS , WMC1N40D1 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , WMJ11N150D1 .
History: SP8M24FRA
Keywords - WMB90P04TS MOSFET datasheet
WMB90P04TS cross reference
WMB90P04TS equivalent finder
WMB90P04TS lookup
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WMB90P04TS replacement
History: SP8M24FRA



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