All MOSFET. WMO3N120D1 Datasheet

 

WMO3N120D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO3N120D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 62.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO252

 WMO3N120D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO3N120D1 Datasheet (PDF)

 ..1. Size:1366K  way-on
 wmj3n120d1 wmo3n120d1.pdf

WMO3N120D1 WMO3N120D1

WMJ3N120D1 WMO3N120D11200V 3A 6.3 N-ch Power MOSFETDescriptionTO-247TO-252WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.DGGDSSFeatures Typ.R =6.3@V =10VDS(on) GS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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