WMJ99N60C4 MOSFET Datasheet: N-Ch, 600V, 99A. Full specification with pinout and replacement list

WMJ99N60C4 Specs and Replacement

Type Designator: WMJ99N60C4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 460 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 99 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 129 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO247

WMJ99N60C4 substitution

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WMJ99N60C4 datasheet

..1. Size:528K way-on
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6.1. Size:528K way-on
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WM F2 MJ99N60F 600V 0.022 S unction P MOSFET Super Ju Power M T Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f s SJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e r S D G switching a s... See More ⇒

Detailed specifications: WMJ80N60C4, WMJ80N60F2, WMJ80N65C4, WMJ80N65F2, WMJ90N60C4, WMJ90N60F2, WMJ90N65C4, WMJ90N65F2, IRF9540N, WMJ99N60F2, WMJ9N150D1, WMJ9N90D1B, WML9N90D1B, WMK020N06HG4, WMK023N08HGS, WMK028N08HGD, WMK028N10HG2