All MOSFET. WMJ99N60C4 Datasheet

 

WMJ99N60C4 Datasheet and Replacement


   Type Designator: WMJ99N60C4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 99 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 129 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO247
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WMJ99N60C4 Datasheet (PDF)

 ..1. Size:528K  way-on
 wmj99n60c4.pdf pdf_icon

WMJ99N60C4

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 6.1. Size:528K  way-on
 wmj99n60f2.pdf pdf_icon

WMJ99N60C4

WM F2 MJ99N60F 600V 0.022 S unction P MOSFETSuper Ju Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WTM3401 | TSM4424CS | LKK47-06C5 | SDP10N60 | CS640A8H | SLF13N50A | BRCS200P03DP

Keywords - WMJ99N60C4 MOSFET datasheet

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