All MOSFET. WMJ99N60C4 Datasheet

 

WMJ99N60C4 Datasheet and Replacement


   Type Designator: WMJ99N60C4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 99 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 129 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO247
 

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WMJ99N60C4 Datasheet (PDF)

 ..1. Size:528K  way-on
 wmj99n60c4.pdf pdf_icon

WMJ99N60C4

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 6.1. Size:528K  way-on
 wmj99n60f2.pdf pdf_icon

WMJ99N60C4

WM F2 MJ99N60F 600V 0.022 S unction P MOSFETSuper Ju Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s

Datasheet: WMJ80N60C4 , WMJ80N60F2 , WMJ80N65C4 , WMJ80N65F2 , WMJ90N60C4 , WMJ90N60F2 , WMJ90N65C4 , WMJ90N65F2 , IRF1010E , WMJ99N60F2 , WMJ9N150D1 , WMJ9N90D1B , WML9N90D1B , WMK020N06HG4 , WMK023N08HGS , WMK028N08HGD , WMK028N10HG2 .

History: SI7N65F

Keywords - WMJ99N60C4 MOSFET datasheet

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