All MOSFET. WMJ99N60C4 Datasheet

 

WMJ99N60C4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ99N60C4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
   |Id|ⓘ - Maximum Drain Current: 99 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 175 nC
   trⓘ - Rise Time: 129 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO247

 WMJ99N60C4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ99N60C4 Datasheet (PDF)

 ..1. Size:528K  way-on
 wmj99n60c4.pdf

WMJ99N60C4 WMJ99N60C4

WM C4 MJ99N60C 600V 0.0195 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density

 6.1. Size:528K  way-on
 wmj99n60f2.pdf

WMJ99N60C4 WMJ99N60C4

WM F2 MJ99N60F 600V 0.022 S unction P MOSFETSuper Ju Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE65NF190V | CEN2321A | WMP07N65C2 | IRFD9024 | KHB1D0N70G | KP509A9 | AP1005BSQ

 

 
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