WMK037N10HGS Specs and Replacement
Type Designator: WMK037N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 215.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 170 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29.5 nS
Cossⓘ - Output Capacitance: 882 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO220
WMK037N10HGS substitution
- MOSFET ⓘ Cross-Reference Search
WMK037N10HGS datasheet
wmk037n10hgs.pdf
WMK037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK037N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S Features D G TO-220 V = 100V, I = 170A ... See More ⇒
wmk030n06lg4.pdf
WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 60V, I = 18... See More ⇒
wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf
WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf... See More ⇒
wmk036n12hgs.pdf
WMK036N12HGS 120V N-Channel Enhancement Mode Power MOSFET Description WMK036N12HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 120V, I = 188A ... See More ⇒
Detailed specifications: WMK020N06HG4, WMK023N08HGS, WMK028N08HGD, WMK028N10HG2, WMK028N10HGS, WMK030N06HG4, WMK030N06LG4, WMK036N12HGS, 5N65, WMK040N08HGS, WMK043N10HGS, WMK043N10LGS, WMK048NV6HG4, WMK048NV6LG4, WMK053N10HGS, WMK053NV8HGS, WMK05N70MM
Keywords - WMK037N10HGS MOSFET specs
WMK037N10HGS cross reference
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