All MOSFET. WMK048NV6HG4 Datasheet

 

WMK048NV6HG4 Datasheet and Replacement


   Type Designator: WMK048NV6HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 772 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO220
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WMK048NV6HG4 Datasheet (PDF)

 ..1. Size:623K  way-on
 wmk048nv6hg4.pdf pdf_icon

WMK048NV6HG4

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11

 5.1. Size:623K  way-on
 wmk048nv6lg4.pdf pdf_icon

WMK048NV6HG4

WMK048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11

 9.1. Size:991K  way-on
 wmk043n10lgs.pdf pdf_icon

WMK048NV6HG4

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A

 9.2. Size:620K  way-on
 wmk040n08hgs.pdf pdf_icon

WMK048NV6HG4

WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 80V, I = 180A D

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Keywords - WMK048NV6HG4 MOSFET datasheet

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