All MOSFET. FDP8N50NZ Datasheet

 

FDP8N50NZ Datasheet and Replacement


   Type Designator: FDP8N50NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220
 

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FDP8N50NZ Datasheet (PDF)

 ..1. Size:719K  fairchild semi
 fdp8n50nz fdpf8n50nzt.pdf pdf_icon

FDP8N50NZ

October 2009UniFETTMFDP8N50NZ / FDPF8N50NZTN-Channel MOSFET 500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been

 ..2. Size:245K  fairchild semi
 fdp8n50nz fdpf8n50nz fdpf8n50nzt.pdf pdf_icon

FDP8N50NZ

March 2010UniFETTMFDP8N50NZ / FDPF8N50NZtmN-Channel MOSFET500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been es

 ..3. Size:888K  onsemi
 fdp8n50nz fdpf8n50nz.pdf pdf_icon

FDP8N50NZ

October 2013FDP8N50NZ / FDPF8N50NZN-Channel UniFETTM II MOSFET500 V, 8 A, 850 mFeatures Description RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 14 nC)technology. This advanced MOSFET family has the smallest Low Crss (

 0.1. Size:677K  fairchild semi
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FDP8N50NZ

February 2010UniFET-IITMFDP8N50NZU / FDPF8N50NZUtmN-Channel MOSFET500V, 6.5A, 1.2Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance t echnology

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