All MOSFET. WMK072N12LG2 Datasheet

 

WMK072N12LG2 Datasheet and Replacement


   Type Designator: WMK072N12LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 173.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 108 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 52.5 nC
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 830 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220
 

 WMK072N12LG2 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMK072N12LG2 Datasheet (PDF)

 ..1. Size:600K  way-on
 wmk072n12lg2.pdf pdf_icon

WMK072N12LG2

WMK072N12LG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK072N12LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 120V, I =

 5.1. Size:510K  way-on
 wmk072n12hg2.pdf pdf_icon

WMK072N12LG2

WMK072N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK072N12HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 120V, I =

 9.1. Size:731K  way-on
 wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf pdf_icon

WMK072N12LG2

WM 2, WMN07N MM07N100CML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100CMO07N100C N100C2, WM C2 1000V Super Ju MOSFETV 2.0 S unction Power M TDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low

 9.2. Size:679K  way-on
 wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdf pdf_icon

WMK072N12LG2

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80MWMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET0V 1.6 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

SHOW MORE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPU50R950CE

Keywords - WMK072N12LG2 MOSFET datasheet

 WMK072N12LG2 cross reference
 WMK072N12LG2 equivalent finder
 WMK072N12LG2 lookup
 WMK072N12LG2 substitution
 WMK072N12LG2 replacement

 

 
Back to Top

 


 
.