WMK119N12HG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK119N12HG4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 23.7 nC
Rise Time (tr): 5.3 nS
Drain-Source Capacitance (Cd): 268 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0119 Ohm
Package: TO220
WMK119N12HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK119N12HG4 Datasheet (PDF)
wmk119n12hg4.pdf
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