All MOSFET. WMK119N12HG4 Datasheet

 

WMK119N12HG4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMK119N12HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23.7 nC
   trⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 268 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0119 Ohm
   Package: TO220

 WMK119N12HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMK119N12HG4 Datasheet (PDF)

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