WMK161N15T2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK161N15T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 365 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 161 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 78 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 480 pF
Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm
Package: TO220
WMK161N15T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK161N15T2 Datasheet (PDF)
wmk161n15t2.pdf
WMK161N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK161N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 150V, I = 161A DS DSDGR
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WML16N70SR, W 70SR, WM SR WMK16N7 MM16N70S WMN16N70SR, WMP16N7 MO16N70S70SR, WM SR 700V 0.31 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge perfo
wmk16n10t1.pdf
WMK16N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK16N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V =100V, I = 15.8A DS DTO-220R
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