All MOSFET. FDPF10N50UT Datasheet

 

FDPF10N50UT MOSFET. Datasheet pdf. Equivalent

Type Designator: FDPF10N50UT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm

Package: TO220F

FDPF10N50UT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDPF10N50UT Datasheet (PDF)

1.1. fdp10n50u fdpf10n50ut.pdf Size:483K _fairchild_semi

FDPF10N50UT
FDPF10N50UT

November 2009 UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05? Features Description • RDS(on) = 0.85? ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis- tors are p roduced using Fa irchild’s proprietary, planar stripe, • Low Gate Charge ( Typ. 18nC) DMOS technology. • Low Crss ( Typ. 9pF) This advan ce technology has been espec

1.2. fdp10n50f fdpf10n50ft.pdf Size:409K _fairchild_semi

FDPF10N50UT
FDPF10N50UT

January 2009 UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85? Features Description • RDS(on) = 0.71? ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge ( Typ. 18nC) DMOS technology. • Low Crss ( Typ. 10pF) This advance technology has been especial

 

 3.1. fdp10n60nz fdpf10n60nz.pdf Size:659K _fairchild_semi

FDPF10N50UT
FDPF10N50UT

November 2013 FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features Description • RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 23 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ.

3.2. fdp10n60zu fdpf10n60zut.pdf Size:554K _fairchild_semi

FDPF10N50UT
FDPF10N50UT

April 2009 TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8? Features Description • RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 31nC) stripe, DMOS technology. • Low Crss ( Typ. 15pF) This advance technology has be

Datasheet: FDP8876 , STK600 , FDP8880 , STK400 , FDP8896 , STK103 , FDP8N50NZ , FDPF10N50FT , TPC8107 , FDPF10N60NZ , STM4472 , FDPF10N60ZUT , STG8209 , FDPF12N50FT , FDPF12N50NZ , FDPF12N50T , FDPF12N50UT .

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