WMK18P10TS PDF and Equivalents Search

 

WMK18P10TS Specs and Replacement

Type Designator: WMK18P10TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

WMK18P10TS substitution

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WMK18P10TS datasheet

 ..1. Size:594K  way-on
wmk18p10ts.pdf pdf_icon

WMK18P10TS

WMK18P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMK18P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -18A DS D S D G R ... See More ⇒

 9.1. Size:708K  way-on
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf pdf_icon

WMK18P10TS

WML18 WMK18N7 8N70EM, W 70EM, WMM18N70EM WMN18 WMP18N7 8N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ... See More ⇒

 9.2. Size:1263K  way-on
wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf pdf_icon

WMK18P10TS

WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S ... See More ⇒

 9.3. Size:594K  way-on
wmk180n03ts.pdf pdf_icon

WMK18P10TS

WMK180N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMK180N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V = 30V, I = 180A DS D TO-220 R ... See More ⇒

Detailed specifications: WMK161N15T2, WMK16N10T1, WMK175N10HG4, WMK175N10LG4, WMK180N03TS, WMK18N50D1B, WML18N50D1B, WMJ18N50D1B, IRLB3034, WMK190N03TS, WMK190N15HG4, WMK220N20HG3, WMK25N06TS, WMK25N10T1, WMK28N15T2, WMK340N20HG2, WMK4N90D1B

Keywords - WMK18P10TS MOSFET specs

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