WML4N90D1B MOSFET Datasheet: N-Ch, 900V, 4A. Full specification with pinout and replacement list

WML4N90D1B Specs and Replacement

Type Designator: WML4N90D1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 116 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO220F

WML4N90D1B substitution

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WML4N90D1B datasheet

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WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S ... See More ⇒

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WML4N90D1 WMK4N90D1 WMM4N90D1 900V 4A 2.9 N-ch Power MOSFET Description TO-220F TO-220 TO-263 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G D S G S D S Features Typ.R =2.9... See More ⇒

9.1. Size:1584K way-on
wmaa4n65d1b wmk4n65d1b wml4n65d1b wmo4n65d1b.pdf pdf_icon

WMAA4N65D1B WMK4N65D1B WML4N65D1B WMO4N65D1B 650V 4A 2.2 N-ch Power MOSFET Description TO-220F TO-220 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power G G density and high efficiency. And it is very D D S S robust and RoHS compliant. TO-252 TO-251-L9.4 TAB Featur... See More ⇒

9.2. Size:1105K way-on
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WML4N100D1 1000V 4A 2.2 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G V =1050V@T DS jmax D S Typ.R =2.2 @V =10V DS(on) G... See More ⇒

Detailed specifications: WMK190N03TS, WMK190N15HG4, WMK220N20HG3, WMK25N06TS, WMK25N10T1, WMK28N15T2, WMK340N20HG2, WMK4N90D1B, AO4407A, WMM4N90D1B, WMK50N06TS, WMK6N90D1, WML6N90D1, WMM6N90D1, WMK75N03T1, WMK7N65D1B, WMH7N65D1B