All MOSFET. WMM6N90D1 Datasheet

 

WMM6N90D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMM6N90D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 86.2 nC
   trⓘ - Rise Time: 181 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO263

 WMM6N90D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMM6N90D1 Datasheet (PDF)

 ..1. Size:1270K  way-on
 wmk6n90d1 wml6n90d1 wmm6n90d1.pdf

WMM6N90D1 WMM6N90D1

WMK6N90D1 WML6N90D1 WMM6N90D1900V 6A 1.7 N-ch Power MOSFETDescriptionTO-263TO-220 TO-220FWMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.DGG GDDS SSFeatures Typ.R =1.7@V =

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SJ325-Z | ZVN2110A | BRF5N65 | TK70J20D | CST08N50F | PPMT30V3

 

 
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