WMK9N50D1B MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK9N50D1B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
WMK9N50D1B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK9N50D1B Datasheet (PDF)
wmk9n50d1b wml9n50d1b wmo9n50d1b.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .