WMK9N50D1B PDF and Equivalents Search

 

WMK9N50D1B Specs and Replacement

Type Designator: WMK9N50D1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

WMK9N50D1B substitution

- MOSFET ⓘ Cross-Reference Search

 

WMK9N50D1B datasheet

 ..1. Size:1621K  way-on
 wmk9n50d1b wml9n50d1b wmo9n50d1b.pdf pdf_icon

WMK9N50D1B

WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S ... See More ⇒

Detailed specifications: WMK7N65D1B, WMH7N65D1B, WML7N65D1B, WMO7N65D1B, WMK80N04T1, WMK80N06TS, WMK80N08TS, WMK90N08TS, IRF640, WML9N50D1B, WMO9N50D1B, WML030N06HG4, WML03N80M3, WMN03N80M3, WMM03N80M3, WMO03N80M3, WMP03N80M3

Keywords - WMK9N50D1B MOSFET specs

 WMK9N50D1B cross reference

 WMK9N50D1B equivalent finder

 WMK9N50D1B pdf lookup

 WMK9N50D1B substitution

 WMK9N50D1B replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.