WMM03N80M3 MOSFET Datasheet: N-Ch, 800V, 3A. Full specification with pinout and replacement list

WMM03N80M3 Specs and Replacement

Type Designator: WMM03N80M3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 11 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO263

WMM03N80M3 substitution

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WMM03N80M3 datasheet

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wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf... See More ⇒

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WMM036N12HGS 120V N-Channel Enhancement Mode Power MOSFET Description WMM036N12HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 120V, I = 188A ... See More ⇒

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wmm037n10hgs.pdf pdf_icon

WMM037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM037N10HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 170A ... See More ⇒

9.3. Size:693K way-on
wmm030n06hg4.pdf pdf_icon

WMM030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMM030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G S is well suited for high efficiency fast switching applications. TO-263 Features V = 60V, I = 18... See More ⇒

Detailed specifications: WMK80N08TS , WMK90N08TS , WMK9N50D1B , WML9N50D1B , WMO9N50D1B , WML030N06HG4 , WML03N80M3 , WMN03N80M3 , AO3400 , WMO03N80M3 , WMP03N80M3 , WMK03N80M3 , WML05N100C2 , WMK05N100C2 , WMM05N100C2 , WMN05N100C2 , WMP05N100C2 .