WMM03N80M3 Datasheet and Replacement
Type Designator: WMM03N80M3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO263
WMM03N80M3 substitution
WMM03N80M3 Datasheet (PDF)
wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80MWMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET0V 3.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf
wmm036n12hgs.pdf

WMM036N12HGS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMM036N12HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 120V, I = 188A
wmm037n10hgs.pdf

WMM037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM037N10HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 170A
wmm030n06hg4.pdf

WMM030N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device GSis well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 18
Datasheet: WMK80N08TS , WMK90N08TS , WMK9N50D1B , WML9N50D1B , WMO9N50D1B , WML030N06HG4 , WML03N80M3 , WMN03N80M3 , IRF3710 , WMO03N80M3 , WMP03N80M3 , WMK03N80M3 , WML05N100C2 , WMK05N100C2 , WMM05N100C2 , WMN05N100C2 , WMP05N100C2 .
History: HY3306B
Keywords - WMM03N80M3 MOSFET datasheet
WMM03N80M3 cross reference
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History: HY3306B



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