WMK05N105C2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK05N105C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.7 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: TO220
WMK05N105C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK05N105C2 Datasheet (PDF)
wml05n105c2 wmk05n105c2 wmm05n105c2 wmn05n105c2 wmp05n105c2 wmo05n105c2.pdf
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WML05N100C2, WMK05N100C2, WMM C2 M05N100CWMN05N WMP05N100C2, WMO C2 N100C2, W O05N100C 1000V 2.6 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D S D G GG D G and low ga charge performanc WMOS
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WML05N80M3, W 80M3, WM M3 WMN05N8 MM05N80MWMO0 80M3, WM M3 05N80M3, WMP05N8 MK05N80M 800 Junction ET0V 2.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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