All MOSFET. WMM06N80M3 Datasheet

 

WMM06N80M3 Datasheet and Replacement


   Type Designator: WMM06N80M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO263
 

 WMM06N80M3 substitution

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WMM06N80M3 Datasheet (PDF)

 ..1. Size:673K  way-on
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WMM06N80M3

WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80MWMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET0V 1.8 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

Datasheet: WMN05N80M3 , WMM05N80M3 , WMO05N80M3 , WMP05N80M3 , WMK05N80M3 , WML060N10HGS , WML06N80M3 , WMN06N80M3 , IRF9540N , WMO06N80M3 , WMP06N80M3 , WMK06N80M3 , WML071N15HG2 , WML07N100C2 , WMN07N100C2 , WMM07N100C2 , WMJ07N100C2 .

History: NCES120P035T4 | SI2318CDS | JSM7409B | R6025ANZ | IPD70R950CE | STP15NK50Z | IPA70R360P7S

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