WMO10N100C2 Datasheet and Replacement
Type Designator: WMO10N100C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
WMO10N100C2 substitution
WMO10N100C2 Datasheet (PDF)
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf

WM 2, WMN10N MM10N100CML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100CMO10N100C N100C2, WM C2 1000V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf

WM 2, WMN10N MM10N105CML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105CMO10N105C N105C2, WM C2 1050V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM
wml10n70d1 wmo10n70d1.pdf

WML10N70D1 WMO10N70D1700V 10A 0.88 N-ch Power MOSFETDescriptionTO-220F TO-252WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGrobust and RoHS compliant.G SDSFeatures Typ.R =0.88@V =10VDS(on) GS 1
Datasheet: WMP08N80M3 , WMK08N80M3 , WML099N10HGS , WML100N07TS , WML10N100C2 , WMN10N100C2 , WMM10N100C2 , WMJ10N100C2 , IRF1405 , WMP10N100C2 , WMK10N100C2 , WML10N105C2 , WMN10N105C2 , WMM10N105C2 , WMJ10N105C2 , WMO10N105C2 , WMP10N105C2 .
History: ISZ019N03L5S | IRLML9303
Keywords - WMO10N100C2 MOSFET datasheet
WMO10N100C2 cross reference
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History: ISZ019N03L5S | IRLML9303



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