WMO10N100C2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO10N100C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18.8 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
WMO10N100C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO10N100C2 Datasheet (PDF)
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: WMK53N60C4 | KP901B | KP750A | HM2319A | UTT25P10L-TF3-T | IRFBG30PBF
History: WMK53N60C4 | KP901B | KP750A | HM2319A | UTT25P10L-TF3-T | IRFBG30PBF
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