FDPF15N65 Specs and Replacement
Type Designator: FDPF15N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 38.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
Package: TO220F
- MOSFET ⓘ Cross-Reference Search
FDPF15N65 datasheet
..1. Size:490K fairchild semi
fdp15n65 fdpf15n65.pdf 
April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia... See More ⇒
..2. Size:490K onsemi
fdp15n65 fdpf15n65.pdf
April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia... See More ⇒
0.1. Size:457K fairchild semi
fdp15n65 fdpf15n65ydtu.pdf
April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia... See More ⇒
7.1. Size:250K fairchild semi
fdp15n40 fdpf15n40.pdf
October 2008 UniFETTM FDP15N40 / FDPF15N40 tm N-Channel MOSFET 400V, 15A, 0.3 Features Description RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 28nC) stripe, DMOS technology. Low Crss ( Typ. 17pF) This advanced technology has ... See More ⇒
9.1. Size:427K fairchild semi
fdpf12n35.pdf
April 2007 TM UniFET FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features Description 12A, 350V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 15 pF) stripe, DMOS technology. Fast switching This advanced technology h... See More ⇒
9.2. Size:483K fairchild semi
fdp10n50u fdpf10n50ut.pdf
November 2009 UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05 Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis- tors are p roduced using Fa irchild s proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 9pF) This advan ce technology... See More ⇒
9.3. Size:601K fairchild semi
fdpf18n20ft g.pdf
April 2013 FDPF18N20FT_G N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 129 m (Typ.) @ VGS = 10 V, ID = 9 A MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 20 nC) MOSFET is tailored to reduce on-state resistance, and to provide bette... See More ⇒
9.4. Size:377K fairchild semi
fdp12n50nz fdpf12n50nz.pdf
October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52 Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced tech... See More ⇒
9.5. Size:870K fairchild semi
fdp18n50 fdpf18n50 fdpf18n50t.pdf
November 2013 FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 m Features Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to Low... See More ⇒
9.6. Size:483K fairchild semi
fdp14n30 fdpf14n30.pdf
February 2007 TM UniFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 18 nC) stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especiall... See More ⇒
9.7. Size:1433K fairchild semi
fdpf16n50 fdpf16n50t.pdf
November 2013 FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 m Features Description RDS(on) = 380 m (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (... See More ⇒
9.8. Size:241K fairchild semi
fdp16n50u fdpf16n50ut.pdf
October 2009 UniFETTM FDP16N50U / FDPF16N50UT tm N-Channel MOSFET, FRFET 500V, 15A, 0.48 Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 32nC) DMOS technology. Low Crss ( Typ. 20pF) This advance tech... See More ⇒
9.9. Size:466K fairchild semi
fdp18n50 fdpf18n50.pdf
April 2007 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially ... See More ⇒
9.10. Size:446K fairchild semi
fdp12n50 fdpf12n50.pdf
June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65 Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF) This advanced technology has be... See More ⇒
9.11. Size:554K fairchild semi
fdp10n60zu fdpf10n60zut.pdf
April 2009 TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8 Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 31nC) stripe, DMOS technology. Low Crss ( Typ. 15pF) This advance tech... See More ⇒
9.12. Size:658K fairchild semi
fdpf18n20f.pdf
September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14 Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology h... See More ⇒
9.13. Size:625K fairchild semi
fdp13n50f fdpf13n50ft.pdf
September 2007 UniFETTM FDP13N50F / FDPF13N50FT tm N-Channel MOSFET 500V, 12A, 0.54 Features Description RDS(on) = 0.42 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 30nC) stripe, DMOS technology. Low Crss ( Typ. 14.5pF) This advanced technol... See More ⇒
9.14. Size:685K fairchild semi
fdp18n20f fdpf18n20f.pdf
September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14 Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology h... See More ⇒
9.15. Size:232K fairchild semi
fdpf190n15a.pdf
April 2011 FDPF190N15A N-Channel PowerTrench MOSFET 150V, 27.4A, 19m Features Description RDS(on) = 14.7m ( Typ.)@ VGS = 10V, ID = 27.4A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Low Gate Charge ( Typ. 30nC) especially tailored to minimize the on-state resistance and yet maintain superior switching per... See More ⇒
9.16. Size:695K fairchild semi
fdp12n50f fdpf12n50ft.pdf
December 2007 UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7 Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technolog... See More ⇒
9.17. Size:409K fairchild semi
fdp10n50f fdpf10n50ft.pdf
January 2009 UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85 Features Description RDS(on) = 0.71 ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 10pF) This advance technology has ... See More ⇒
9.18. Size:646K fairchild semi
fdp12n50u fdpf12n50ut.pdf
November 2007 Ultra FRFETTM FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8 Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance... See More ⇒
9.19. Size:284K fairchild semi
fdp12n60nz fdpf12n60nz.pdf
September 2010 UniFET-II TM FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET 600V, 12A, 0.65 Features Description RDS(on) = 0.53 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 26nC) DOMS technology. Low Crss ( Typ. 12pF) This advance techno... See More ⇒
9.20. Size:362K fairchild semi
fdpf14n30t.pdf
February 2007 TM UniFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 18 nC) stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especiall... See More ⇒
9.21. Size:464K fairchild semi
fdp16n50 fdpf16n50.pdf
April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially t... See More ⇒
9.22. Size:258K fairchild semi
fdp19n40 fdpf19n40.pdf
October UniFETTM FDP19N40 / FDPF19N40 tm N-Channel MOSFET 400V, 19A, 0.24 Features Description RDS(on) =0.2 ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 32nC) stripe, DMOS technology. Low Crss ( Typ. 20pF) This advanced technology has been ... See More ⇒
9.23. Size:370K fairchild semi
fdpf12n50nzt.pdf
October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52 Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced tech... See More ⇒
9.24. Size:659K fairchild semi
fdp10n60nz fdpf10n60nz.pdf
November 2013 FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ.... See More ⇒
9.25. Size:761K fairchild semi
fdp17n60n fdpf17n60nt.pdf
July 2009 UniFETTM FDP17N60N / FDPF17N60NT N-Channel MOSFET 600V, 17A, 0.34 Features Description RDS(on) = 0.29 ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 48nC) stripe, DMOS technology. Low Crss ( Typ. 23pF) This advanced technology has b... See More ⇒
9.26. Size:535K fairchild semi
fdp12n50 fdpf12n50t.pdf
May 2012 UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65 Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF) This advanced technology has be... See More ⇒
9.27. Size:1572K onsemi
fdp18n50 fdpf18n50 fdpf18n50t.pdf
FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 m Features RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A Description Low Gate Charge (Typ. 45 nC) UniFETTM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Crss (Typ. 25 pF) This MOSFET is tailored to reduce on-state resistance, and to... See More ⇒
9.28. Size:680K onsemi
fdpf12n50ft.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.29. Size:1033K onsemi
fdp18n50 fdpf18n50.pdf
October 2006 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially... See More ⇒
9.30. Size:694K onsemi
fdpf12n50ut.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.31. Size:744K onsemi
fdpf190n15a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.32. Size:643K onsemi
fdp12n60nz fdpf12n60nz.pdf
November 2013 FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features Description RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 26 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ.... See More ⇒
9.33. Size:938K onsemi
fdp18n20f fdpf18n20ft.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.34. Size:388K onsemi
fdpf14n30.pdf
November 2013 FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 18 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching perfo... See More ⇒
9.35. Size:659K onsemi
fdp10n60nz fdpf10n60nz.pdf
November 2013 FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ.... See More ⇒
9.36. Size:739K onsemi
fdp12n50 fdpf12n50t.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.37. Size:1542K onsemi
fdpf16n50ut.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.38. Size:873K cn vbsemi
fdpf10n60nz.pdf
FDPF10N60NZ www.VBsemi.tw N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd (nC) Configur... See More ⇒
9.39. Size:255K inchange semiconductor
fdpf12n50nz.pdf
Isc N-Channel MOSFET Transistor FDPF12N50NZ FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-... See More ⇒
Detailed specifications: FDPF12N50FT, FDPF12N50NZ, FDPF12N50T, FDPF12N50UT, FDPF12N60NZ, STG8205, FDPF13N50FT, FDPF14N30, EMB04N03H, FDPF16N50, FDPF16N50T, FDPF16N50UT, FDPF17N60NT, STG2454, FDPF18N20FT, STF8810, FDPF18N50
Keywords - FDPF15N65 MOSFET specs
FDPF15N65 cross reference
FDPF15N65 equivalent finder
FDPF15N65 pdf lookup
FDPF15N65 substitution
FDPF15N65 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
