FDPF16N50 Datasheet and Replacement

November 2013FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET500 V, 16 A, 380 mFeatures Description RDS(on) = 380 m (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (

April 2007TMUniFETFDP16N50 / FDPF16N50500V N-Channel MOSFETFeatures Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially t

October 2009UniFETTMFDP16N50U / FDPF16N50UTtmN-Channel MOSFET, FRFET500V, 15A, 0.48Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 32nC)DMOS technology. Low Crss ( Typ. 20pF)This advance tech

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

April 2007 TMUniFETFDP12N35 / FDPF12N35 350V N-Channel MOSFETFeatures Description 12A, 350V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 15 pF) stripe, DMOS technology. Fast switchingThis advanced technology h

November 2009UniFETTMFDP10N50U / FDPF10N50UTtmN-Channel MOSFET500V, 8A, 1.05Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis-tors are p roduced using Fa irchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC)DMOS technology. Low Crss ( Typ. 9pF)This advan ce technology

April 2013FDPF18N20FT_G N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 129 m (Typ.) @ VGS = 10 V, ID = 9 AMOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 20 nC)MOSFET is tailored to reduce on-state resistance, and to provide bette

October 2010UniFET-IITMFDP12N50NZ / FDPF12N50NZN-Channel MOSFET 500V, 11.5A, 0.52Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC )stripe, DMOS technology. Low Crss ( Typ. 14pF )This advanced tech

November 2013FDP18N50 / FDPF18N50 / FDPF18N50TN-Channel UniFETTM MOSFET500 V, 18 A, 265 mFeatures Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45 nC)This MOSFET is tailored to reduce on-state resistance, and to Low

February 2007TMUniFETFDP14N30 / FDPF14N30300V N-Channel MOSFETFeatures Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 18 nC)stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especiall

April 2007TMUniFETFDP18N50 / FDPF18N50500V N-Channel MOSFETFeatures Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

June 2007UniFETTMFDP12N50 / FDPF12N50tmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

April 2009TM UniFETFDP10N60ZU / FDPF10N60ZUTtmN-Channel MOSFET, FRFET 600V, 9A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 31nC)stripe, DMOS technology. Low Crss ( Typ. 15pF)This advance tech

September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology h

September 2007UniFETTMFDP13N50F / FDPF13N50FTtmN-Channel MOSFET 500V, 12A, 0.54Features Description RDS(on) = 0.42 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 30nC)stripe, DMOS technology. Low Crss ( Typ. 14.5pF)This advanced technol

September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology h

April 2011FDPF190N15AN-Channel PowerTrench MOSFET 150V, 27.4A, 19mFeatures Description RDS(on) = 14.7m ( Typ.)@ VGS = 10V, ID = 27.4A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Low Gate Charge ( Typ. 30nC)especially tailored to minimize the on-state resistance and yet maintain superior switching per

December 2007UniFETTMFDP12N50F / FDPF12N50FTtmN-Channel MOSFET 500V, 11.5A, 0.7Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technolog

January 2009UniFETTMFDP10N50F / FDPF10N50FTN-Channel MOSFET 500V, 9A, 0.85Features Description RDS(on) = 0.71 ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC)DMOS technology. Low Crss ( Typ. 10pF)This advance technology has

November 2007Ultra FRFETTMFDP12N50U / FDPF12N50UTtmN-Channel MOSFET, FRFET 500V, 10A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance

September 2010UniFET-II TMFDP12N60NZ / FDPF12N60NZN-Channel MOSFET600V, 12A, 0.65Features Description RDS(on) = 0.53 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 26nC)DOMS technology. Low Crss ( Typ. 12pF)This advance techno

February 2007TMUniFETFDP14N30 / FDPF14N30300V N-Channel MOSFETFeatures Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 18 nC)stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especiall

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

October UniFETTMFDP19N40 / FDPF19N40tmN-Channel MOSFET 400V, 19A, 0.24Features Description RDS(on) =0.2 ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 32nC)stripe, DMOS technology. Low Crss ( Typ. 20pF)This advanced technology has been

October 2010UniFET-IITMFDP12N50NZ / FDPF12N50NZN-Channel MOSFET 500V, 11.5A, 0.52Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC )stripe, DMOS technology. Low Crss ( Typ. 14pF )This advanced tech

November 2013FDP10N60NZ / FDPF10N60NZN-Channel UniFETTM II MOSFET600 V, 10 A, 750 mFeatures Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ.

October 2008UniFETTMFDP15N40 / FDPF15N40tmN-Channel MOSFET 400V, 15A, 0.3Features Description RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 28nC)stripe, DMOS technology. Low Crss ( Typ. 17pF)This advanced technology has

July 2009UniFETTMFDP17N60N / FDPF17N60NTN-Channel MOSFET 600V, 17A, 0.34Features Description RDS(on) = 0.29 ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 48nC)stripe, DMOS technology. Low Crss ( Typ. 23pF)This advanced technology has b

May 2012UniFETTMFDP12N50 / FDPF12N50TtmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

FDP18N50 / FDPF18N50 / FDPF18N50TN-Channel UniFETTM MOSFET500 V, 18 A, 265 mFeatures RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 ADescription Low Gate Charge (Typ. 45 nC)UniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Crss (Typ. 25 pF)This MOSFET is tailored to reduce on-state resistance, and to

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2006TMUniFETFDP18N50 / FDPF18N50500V N-Channel MOSFETFeatures Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

November 2013FDP12N60NZ / FDPF12N60NZN-Channel UniFETTM II MOSFET600 V, 12 A, 650 mFeatures Description RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 26 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ.

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

November 2013FDPF14N30N-Channel UniFETTM MOSFET300 V, 14 A, 290 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 18 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better switching perfo

November 2013FDP10N60NZ / FDPF10N60NZN-Channel UniFETTM II MOSFET600 V, 10 A, 750 mFeatures Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ.

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDPF10N60NZwww.VBsemi.twN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)22Qgd (nC)Configur

Isc N-Channel MOSFET Transistor FDPF12N50NZFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-