WMK12N105C2 PDF Specs and Replacement
Type Designator: WMK12N105C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 49 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
WMK12N105C2 substitution
WMK12N105C2 PDF Specs
wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf
WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET Description WMOSTM C2 is Wayon s 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic... See More ⇒
wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf
WML12N100C2, WMM C2 W M12N100C WMN12N WMJ12N10 K12N100C N100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C... See More ⇒
wml12n65d1b wmk12n65d1b.pdf
WML12N65D1B WMK12N65D1B 650V 12A 0.58 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G Features D G S D S V =700V@T DS jmax Typ.R =0.58 @V =1... See More ⇒
wml12n65d1 wmk12n65d1.pdf
WML12N65D1 WMK12N65D1 650V 12A 0.58 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G Features D G S D S V =700V@T DS jmax Typ.R =0.58 @V =10V... See More ⇒
Detailed specifications: WMM12N100C2 , WMN12N100C2 , WMJ12N100C2 , WMK12N100C2 , WML12N105C2 , WMM12N105C2 , WMN12N105C2 , WMJ12N105C2 , IRFB3607 , WML12N65D1 , WMK12N65D1 , WML12N65D1B , WMK12N65D1B , WML12N80M3 , WMN12N80M3 , WMM12N80M3 , WMO12N80M3 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
