FDPF18N50T MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDPF18N50T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO220F

FDPF18N50T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDPF18N50T Datasheet (PDF)

..1. Size:870K fairchild semi
fdp18n50 fdpf18n50 fdpf18n50t.pdf

November 2013FDP18N50 / FDPF18N50 / FDPF18N50TN-Channel UniFETTM MOSFET500 V, 18 A, 265 mFeatures Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45 nC)This MOSFET is tailored to reduce on-state resistance, and to Low

..2. Size:1572K onsemi
fdp18n50 fdpf18n50 fdpf18n50t.pdf

FDP18N50 / FDPF18N50 / FDPF18N50TN-Channel UniFETTM MOSFET500 V, 18 A, 265 mFeatures RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 ADescription Low Gate Charge (Typ. 45 nC)UniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Crss (Typ. 25 pF)This MOSFET is tailored to reduce on-state resistance, and to

5.1. Size:466K fairchild semi
fdp18n50 fdpf18n50.pdf

April 2007TMUniFETFDP18N50 / FDPF18N50500V N-Channel MOSFETFeatures Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

5.2. Size:1033K onsemi
fdp18n50 fdpf18n50.pdf

October 2006TMUniFETFDP18N50 / FDPF18N50500V N-Channel MOSFETFeatures Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

7.1. Size:601K fairchild semi
fdpf18n20ft g.pdf

April 2013FDPF18N20FT_G N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 129 m (Typ.) @ VGS = 10 V, ID = 9 AMOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 20 nC)MOSFET is tailored to reduce on-state resistance, and to provide bette

7.2. Size:658K fairchild semi
fdpf18n20f.pdf

September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology h

7.3. Size:685K fairchild semi
fdp18n20f fdpf18n20f.pdf

7.4. Size:938K onsemi
fdp18n20f fdpf18n20ft.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDPF16N50 , FDPF16N50T , FDPF16N50UT , FDPF17N60NT , STG2454 , FDPF18N20FT , STF8810 , FDPF18N50 , IRFZ44N , FDPF190N15A , FDPF20N50 , FDPF20N50FT , FDPF20N50T , FDPF2710T , FDPF320N06L , FDPF33N25T , FDPF3860T .

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FDPF18N50T MOSFET. Datasheet pdf. Equivalent

FDPF18N50T Datasheet (PDF)

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