WMM16N65SR MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM16N65SR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 32 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO263
WMM16N65SR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM16N65SR Datasheet (PDF)
wml16n65sr wmk16n65sr wmm16n65sr wmn16n65sr wmp16n65sr wmo16n65sr.pdf
WML16N65SR, W 65SR, WM SR WMK16N6 MM16N65S WMN16N65SR, WMP16N6 MO16N65S65SR, WM SR 650V 0.31 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge perfo
wml16n70sr wmk16n70sr wmm16n70sr wmn16n70sr wmp16n70sr wmo16n70sr.pdf
WML16N70SR, W 70SR, WM SR WMK16N7 MM16N70S WMN16N70SR, WMP16N7 MO16N70S70SR, WM SR 700V 0.31 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge perfo
wmm161n15t2.pdf
WMM161N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM161N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures GS V =150V, I = 161A DS DTO-263R
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
