WML16N70D1B MOSFET. Datasheet pdf. Equivalent
Type Designator: WML16N70D1B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 44 nC
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
Package: TO220F
WML16N70D1B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WML16N70D1B Datasheet (PDF)
wml16n70d1b.pdf
WML16N70D1B 700V 16A 0.5 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features Typ.R =0.5@V =10V DS(on) GS 100% avalanche t
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