FDPF2710T Datasheet. Specs and Replacement

Type Designator: FDPF2710T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0425 Ohm

Package: TO220F

  📄📄 Copy 

FDPF2710T substitution

- MOSFET ⓘ Cross-Reference Search

 

FDPF2710T datasheet

 ..1. Size:557K  fairchild semi
fdpf2710t.pdf pdf_icon

FDPF2710T

September 2007 FDPF2710T 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 25A, 250V, RDS(on) = 36.3m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching p... See More ⇒

 9.1. Size:838K  fairchild semi
fdp20n50f fdpf20n50ft.pdf pdf_icon

FDPF2710T

October 2007 UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26 Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10A Description Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF) tors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Fast reve... See More ⇒

 9.2. Size:296K  fairchild semi
fdp24n40 fdpf24n40.pdf pdf_icon

FDPF2710T

December 2007 UniFETTM FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 46nC) stripe, DMOS technology. Low Crss ( Typ. 25pF) This advanced technology has b... See More ⇒

 9.3. Size:469K  fairchild semi
fdp20n50 fdpf20n50.pdf pdf_icon

FDPF2710T

April 2007 TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially... See More ⇒

Detailed specifications: FDPF18N20FT, STF8810, FDPF18N50, FDPF18N50T, FDPF190N15A, FDPF20N50, FDPF20N50FT, FDPF20N50T, IRF1404, FDPF320N06L, FDPF33N25T, FDPF3860T, STF8236, FDPF390N15A, FDPF39N20, STF8234, FDPF3N50NZ

Keywords - FDPF2710T MOSFET specs

 FDPF2710T cross reference

 FDPF2710T equivalent finder

 FDPF2710T pdf lookup

 FDPF2710T substitution

 FDPF2710T replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs