WMP18N70EM
MOSFET. Datasheet pdf. Equivalent
Type Designator: WMP18N70EM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 26
nC
trⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
TO251
WMP18N70EM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMP18N70EM
Datasheet (PDF)
..1. Size:708K way-on
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf
WML18 WMK18N78N70EM, W 70EM, WMM18N70EM WMN18 WMP18N78N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is
8.1. Size:708K way-on
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