WMK26N65SR MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK26N65SR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34.7 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 54 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.198 Ohm
Package: TO220
WMK26N65SR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK26N65SR Datasheet (PDF)
wml26n65sr wmk26n65sr wmn26n65sr wmm26n65sr wmj26n65sr.pdf
WML26N6 MK26N65S65SR, WM SR WMN2 MJ26N65S26N65SR, WMM26N65SR, WM SR 650V 0.17 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM SR is
wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf
WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wml26n65f2 wmo26n65f2 wmk26n65f2 wmn26n65f2 wmm26n65f2 wmj26n65f2.pdf
WML2 N65F2, WM F2 26N65F2, WMO26N MK26N65FWMN2 N65F2, WM F2 26N65F2, WMM26N MJ26N65F 650V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa
wml26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmo26n65c4 wmj26n65c4.pdf
WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
