All MOSFET. WMK30N65EM Datasheet

 

WMK30N65EM MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMK30N65EM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO220

 WMK30N65EM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMK30N65EM Datasheet (PDF)

 ..1. Size:656K  way-on
 wml30n65em wmk30n65em wmn30n65em wmm30n65em wmj30n65em.pdf

WMK30N65EM WMK30N65EM

WML30N6 MK30N65EM W 65EM, WMWMN30 WMM30N6 MJ30N65EM 0N65EM, W 65EM, WM 650V 0.135 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf

 8.1. Size:663K  way-on
 wml30n80m3 wmk30n80m3 wmn30n80m3 wmm30n80m3 wmj30n80m3.pdf

WMK30N65EM WMK30N65EM

WML30N8 MK30N80M80M3, WM M3 WMN3 MJ30N80M30N80M3, WMM30N80M3, WM M3 800V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM M3

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