WMK30N65EM MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK30N65EM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
Rise Time (tr): 43 nS
Drain-Source Capacitance (Cd): 62 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO220
WMK30N65EM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK30N65EM Datasheet (PDF)
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WML30N6 MK30N65EM W 65EM, WMWMN30 WMM30N6 MJ30N65EM 0N65EM, W 65EM, WM 650V 0.135 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf
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WML30N8 MK30N80M80M3, WM M3 WMN3 MJ30N80M30N80M3, WMM30N80M3, WM M3 800V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM M3
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