WMJ30N80M3 PDF and Equivalents Search

 

WMJ30N80M3 Specs and Replacement

Type Designator: WMJ30N80M3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 277 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm

Package: TO247

WMJ30N80M3 substitution

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WMJ30N80M3 datasheet

 ..1. Size:663K  way-on
 wml30n80m3 wmk30n80m3 wmn30n80m3 wmm30n80m3 wmj30n80m3.pdf pdf_icon

WMJ30N80M3

WML30N8 MK30N80M 80M3, WM M3 WMN3 MJ30N80M 30N80M3, WMM30N80M3, WM M3 800V 0.165 S 0 Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga charge performanc WMOSTM M3 ... See More ⇒

 8.1. Size:656K  way-on
 wml30n65em wmk30n65em wmn30n65em wmm30n65em wmj30n65em.pdf pdf_icon

WMJ30N80M3

WML30N6 MK30N65EM W 65EM, WM WMN30 WMM30N6 MJ30N65EM 0N65EM, W 65EM, WM 650V 0.135 S 0 Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate charge perf... See More ⇒

Detailed specifications: WMK30N65EM, WMN30N65EM, WMM30N65EM, WMJ30N65EM, WML30N80M3, WMK30N80M3, WMN30N80M3, WMM30N80M3, AO3401, WML340N20HG2, WML36N60C4, WMK36N60C4, WMN36N60C4, WMM36N60C4, WMJ36N60C4, WML36N60F2, WMK36N60F2

Keywords - WMJ30N80M3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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