All MOSFET. FDPF51N25 Datasheet

 

FDPF51N25 Datasheet and Replacement


   Type Designator: FDPF51N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 55 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO220F
 
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FDPF51N25 Datasheet (PDF)

 ..1. Size:2977K  fairchild semi
fdp51n25 fdpf51n25.pdf pdf_icon

FDPF51N25

July 2008UniFETTMFDP51N25 / FDPF51N25 250V N-Channel MOSFETFeatures Description 51A, 250V, RDS(on) = 0.06 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 55 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 63 pF) stripe, DMOS technology. Fast switchingThis advanced technology has

 ..2. Size:1193K  onsemi
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FDPF51N25

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:200K  inchange semiconductor
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FDPF51N25

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FDPF51N25FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 0.1. Size:650K  fairchild semi
fdpf51n25rdtu.pdf pdf_icon

FDPF51N25

August 2014FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET250 V, 51 A, 60 mFeatures Description RDS(on) = 48 m (Typ.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 55 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 6

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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