All MOSFET. WMJ80R260S Datasheet

 

WMJ80R260S MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ80R260S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 227 W
   Maximum Drain-Source Voltage |Vds|: 800 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 23 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 39 nC
   Rise Time (tr): 41 nS
   Drain-Source Capacitance (Cd): 51 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.255 Ohm
   Package: TO247

 WMJ80R260S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ80R260S Datasheet (PDF)

 ..1. Size:656K  way-on
 wml80r260s wmk80r260s wmn80r260s wmm80r260s wmj80r260s.pdf

WMJ80R260S WMJ80R260S

WML80R MK80R260R260S, WM 0S WMN , WMM80R MJ80R260N80R260S, R260S, WM 0S 800V 0.22 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is

 8.1. Size:927K  way-on
 wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf

WMJ80R260S WMJ80R260S

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications

 8.2. Size:672K  way-on
 wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf

WMJ80R260S WMJ80R260S

WML R480S, WM 0S L80R480S, WMO80R MK80R480WMN , WMM80R MJ80R480N80R480S, R480S, WM 0S 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOST

 8.3. Size:657K  way-on
 wml80r350s wmk80r350s wmn80r350s wmm80r350s wmj80r350s.pdf

WMJ80R260S WMJ80R260S

WML80R MK80R350R350S, WM 0S WMN , WMM80R MJ80R350N80R350S, R350S, WM 0S 800V 0.27 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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