WMJ90R360S
MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ90R360S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 183
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 43
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34
Ohm
Package:
TO247
WMJ90R360S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ90R360S
Datasheet (PDF)
..1. Size:658K way-on
wml90r360s wmk90r360s wmn90r360s wmm90r360s wmj90r360s.pdf 
WML90R MK90R360R360S, WM 0S WMN , WMM90R MJ90R360N90R360S, R360S, WM 0S 900V 0.28 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i
8.1. Size:656K way-on
wml90r260s wmk90r260s wmn90r260s wmm90r260s wmj90r260s.pdf
WML90R MK90R260R260S, WM 0S WMN , WMM90R MJ90R260N90R260S, R260S, WM 0S 900V 0.23 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is
8.2. Size:675K way-on
wml90r500s wmo90r500s wmk90r500s wmn90r500s wmm90r500s wmj90r500s .pdf
WML R500S, WM 0S L90R500S, WMO90R MK90R500WMN , WMM90R MJ90R500N90R500S, R500S, WM 0S 900V 0.41 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan
9.1. Size:542K way-on
wmj90n60f2.pdf
WM F2 MJ90N60F 600V 0.025 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more
9.2. Size:542K way-on
wmj90n60c4.pdf
WM C4 MJ90N60C 600V 0.024 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o
9.3. Size:542K way-on
wmj90n65f2.pdf
WM F2 MJ90N65F 650V 0.025 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more
9.4. Size:543K way-on
wmj90n65c4.pdf
WM C4 MJ90N65C 650V 0.024 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o
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