WMLL017N10HGS MOSFET Datasheet: N-Ch, 100V, 370A. Full specification with pinout and replacement list

WMLL017N10HGS Specs and Replacement

Type Designator: WMLL017N10HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 468.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 370 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 89 nS

Cossⓘ - Output Capacitance: 2192 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: TOLL

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WMLL017N10HGS datasheet

..1. Size:615K way-on
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WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL017N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

8.1. Size:635K way-on
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WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL013N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

8.2. Size:634K way-on
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WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D WMLL014N06HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati... See More ⇒

8.3. Size:608K way-on
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WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D WMLL010N04LG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati... See More ⇒

Detailed specifications: WMO90R500S, WMK90R500S, WMN90R500S, WMM90R500S, WMJ90R500S, WMLL010N04LG4, WMLL013N08HGS, WMLL014N06HG4, 7N65, WMLL020N08HGS, WMLL020N10HG4, WMLL020N10HGS, WMLL020NV8HGS, WMLL025N10HGS, WMLL030N12HGS, WMLL040N15HG2, WMLL065N15HG2