WMLL020N08HGS MOSFET Datasheet: N-Ch, 80V, 310A. Full specification with pinout and replacement list

WMLL020N08HGS Specs and Replacement

Type Designator: WMLL020N08HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 347.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 310 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 1560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TOLL

WMLL020N08HGS substitution

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WMLL020N08HGS datasheet

..1. Size:619K way-on
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WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

6.1. Size:621K way-on
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WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020NV8HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

6.2. Size:613K way-on
wmll020n10hgs.pdf pdf_icon

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

6.3. Size:644K way-on
wmll020n10hg4.pdf pdf_icon

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicat... See More ⇒

Detailed specifications: WMK90R500S, WMN90R500S, WMM90R500S, WMJ90R500S, WMLL010N04LG4, WMLL013N08HGS, WMLL014N06HG4, WMLL017N10HGS, IRFP250N, WMLL020N10HG4, WMLL020N10HGS, WMLL020NV8HGS, WMLL025N10HGS, WMLL030N12HGS, WMLL040N15HG2, WMLL065N15HG2, WMLL099N20HG2