All MOSFET. WMLL020N08HGS Datasheet

 

WMLL020N08HGS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMLL020N08HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 347.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 310 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 1560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TOLL

 WMLL020N08HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMLL020N08HGS Datasheet (PDF)

 ..1. Size:619K  way-on
wmll020n08hgs.pdf

WMLL020N08HGS
WMLL020N08HGS

WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 6.1. Size:621K  way-on
wmll020nv8hgs.pdf

WMLL020N08HGS
WMLL020N08HGS

WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020NV8HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 6.2. Size:613K  way-on
wmll020n10hgs.pdf

WMLL020N08HGS
WMLL020N08HGS

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 6.3. Size:644K  way-on
wmll020n10hg4.pdf

WMLL020N08HGS
WMLL020N08HGS

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat

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