WMLL099N20HG2 PDF and Equivalents Search

 

WMLL099N20HG2 Specs and Replacement


   Type Designator: WMLL099N20HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 142 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TOLL
 

 WMLL099N20HG2 substitution

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WMLL099N20HG2 datasheet

 ..1. Size:996K  way-on
 wmll099n20hg2.pdf pdf_icon

WMLL099N20HG2

WMLL099N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description D D WMLL099N20HG2 uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

 9.1. Size:635K  way-on
 wmll013n08hgs.pdf pdf_icon

WMLL099N20HG2

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL013N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

 9.2. Size:632K  way-on
 wmll025n10hgs.pdf pdf_icon

WMLL099N20HG2

WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL025N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

 9.3. Size:634K  way-on
 wmll014n06hg4.pdf pdf_icon

WMLL099N20HG2

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D WMLL014N06HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati... See More ⇒

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Detailed specifications: WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , IRF4905 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 , WMM028N10HGS , WMM030N06HG4 , WMM036N12HGS .

Keywords - WMLL099N20HG2 MOSFET specs

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